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1.5V Drive Pch MOSFET
RT1A050ZP
Structure
Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : YH
Applications
Switching
Packaging specifications
Equivalent circuit
Each lead has same dimensions
Package
Taping
(8)
(7)
(6)
(5)
Type
Code
TR
Basic ordering unit(piecies)
3000
? 2
RT1A050ZP
? 1
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(1)
(2)
(3)
(4)
(5) Source
(6) Drain
Absolute maximum ratings (Ta=25 ° C)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(7) Drain
(8) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 12
± 10
Unit
V
V
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
± 5
± 20
? 1
? 20
A
A
A
A
Total power dissipation
Channel temperature
Range of Storage temerature
P D
Tch
Tstg
1.25
150
? 55 to +150
W
° C
° C
? 2
? 1 Pw 10 μ s, Duty cycle 1%
? 2 When mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
100
Unit
° C / W
? When mounted on a ceramic board
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.01 - Rev.A
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